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September 2002
s
INDIPENDENCE OF POWER SUPPLY
SEQUENCE CONSIDERATIONS - V
CC
CAN
EXCEED V
DD,
INPUT SIGNALS CAN
EXCEED BOTH V
CC
AND V
DD
s
UP AND DOWN LEVEL SHIFTING
CAPABILITY
s
THREE-STATE OUTPUTS WITH SEPARATE
ENABLE CONTROLS
s
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
s
QUIESCENT CURRENT SPECIFIED UP TO
20V
s
5V, 10V, AND 15V PARAMETRIC RATINGS
s
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25C
s
100% TESTED FOR QUIESCENT CURRENT
s
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
HCF40109B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40109B contains four low-to-high voltage
level shifting circuits. Each circuit will shift a
low-voltage digital-logic input signal (A, B, C, D)
with logical 1 = V
CC
and logical 0 = V
SS
to a higher
voltage output signal (E, F, G, H) with logical 1 =
V
DD
and logical 0 = V
SS
. HCF40109B, unlike other
low-to-high level-shifting circuits, does not require
the presence of the high voltage supply (V
DD)
before the application of either the low-voltage
supply (V
CC
) or the input signals. There are no
restrictions on the sequence of application of V
DD
,
V
CC
, or the input signals. In addition, there are no
restrictions on the relative magnitudes of the
supply voltages or input signals within the device
maximum ratings; V
CC
may exceed V
DD
, and
input signals may exceed V
CC
and V
DD
. When
operated in the mode V
CC
V
DD
, HCF40109B will
operate as a high-to-low level-shifter. HCF40109B
also features individual three-state output
capability. A low level on any of the separately
enabled three-state output controls produces a
high-impedance state in the corresponding output.
HCF40109B
QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER
PIN CONNECTION
ORDER CODES
PACKAGE
TUBE
T & R
DIP
HCF40109BEY
SOP
HCF40109BM1
HCF40109M013TR
DIP
SOP
HCF40109B
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LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
-0.5 to +22
V
V
I
DC Input Voltage
-0.5 to V
DD
+ 0.5
V
I
I
DC Input Current
10
mA
P
D
Power Dissipation per Package
200
mW
Power Dissipation per Output Transistor
100
mW
T
op
Operating Temperature
-55 to +125
C
T
stg
Storage Temperature
-65 to +150
C
Symbol
Parameter
Value
Unit
V
DD
Supply Voltage
3 to 20
V
V
I
Input Voltage
0 to V
DD
V
T
op
Operating Temperature
-55 to 125
C
HCF40109B
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DYNAMIC ELECTRICAL CHARACTERISTICS (T
amb
= 25C, C
L
= 50pF, R
L
= 200K
, t
r
= t
f
= 20 ns)
Symbol
Parameter
Test Condition
Value (*)
Unit
V
CC
(V)
V
DD
(V)
SHITFING MODE
Min.
Typ.
Max.
t
PHL
t
PLH
Propagation Delay Time :
(Data input to output)
High to Low Level
5
10
L - H
300
600
ns
5
15
220
440
10
15
180
360
10
5
H - L
850
1600
15
5
850
1600
15
10
290
580
Low to High Level
5
10
L - H
130
260
ns
5
15
120
240
10
15
70
140
10
5
H - L
230
460
15
5
230
460
15
10
80
160
t
PHZ
3-State Disable DelayTime
Output High to High
Impedance
5
10
L - H
60
120
ns
5
15
50
100
10
15
35
70
10
5
H - L
120
240
15
5
120
240
15
10
40
80
t
PZH
High Impedance to Output
High
5
10
L - H
320
640
ns
5
15
230
460
10
15
180
360
10
5
H - L
800
1500
15
5
800
1500
15
10
280
560
t
PLZ
Output Low to High
Impedance
5
10
L - H
370
740
ns
5
15
300
600
10
15
250
500
10
5
H - L
850
1600
15
5
850
1600
15
10
350
700
t
PZL
High Impedance to Output
Low
5
10
L - H
100
200
ns
5
15
80
160
10
15
40
80
10
5
H - L
120
240
15
5
120
240
15
10
40
80
t
THL,
t
TLH
Transition Time
5
10
L - H
50
100
ns
5
15
40
80
10
15
40
80
10
5
H - L
100
200
15
5
100
200
15
10
50
100
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